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IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 150 46 64 Single
D
FEATURES
600 0.27
* Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications Requirements
Available
* Lower Gate Charge Results in Simple Drive RoHS*
COMPLIANT
* Enhanced dV/dt Capabilities Offer Improved Ruggedness * Higher Gate Voltage Threshold Offers Improved Noise Immunity * Lead (Pb)-free Available
TO-247
APPLICATIONS
* Zero Voltage Switching SMPS
G S D G S N-Channel MOSFET
* Telecom and Server Power Supplies * Uniterruptible Power Supplies * Motor Control Applications
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247 IRFP21N60LPbF SiHFP21N60L-E3 IRFP21N60L SiHFP21N60L
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw TC = 25 C EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 600 30 21 13 84 2.6 420 21 33 330 16 - 55 to + 150 300d 10 1.1 W/C mJ A mJ W V/ns C lbf * in N*m A UNIT V
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 1.9 mH, RG = 25 , IAS = 21 A, dV/dt = 11 V/ns (see fig. 12a). c. ISD 21 A, dI/dt 530 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91206 S-81273-Rev. B, 16-Jun-08 www.vishay.com 1
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.38 UNIT C/W
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related) Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time IS ISM VSD trr Qrr IRRM MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Coss eff. Coss eff. (ER) Qg Qgs Qgd RG td(on) tr td(off) tf
VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 13 Ab VDS = 50 V, ID = 13 A VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 0 V, VDS = 0 V to 480 Vc
600 3.0 11 -
420 0.27 4000 340 29 170 130 0.63 20 58 33 10
5.0 100 50 2.0 0.32 150 46 64 -
V mV/C V nA A mA S
pF
VGS = 10 V
ID = 21 A, VDS = 480 V see fig. 7 and 15b
-
nC
f = 1 MHz, open drain VDD = 300 V, ID = 21 A, RG = 1.3 , VGS = 10 V, see fig. 11a and 11bb
-
ns
-
160 400 480 1540 5.3
21 A 84 1.5 240 610 730 2310 7.9 V ns
G
S
TJ = 25 C, IS = 21 A, VGS = 0 Vb TJ = 25 C, IF = 21 A TJ = 125 C, dI/dt = 100 A/sb TJ = 25 C, IF = 21 A, VGS = 0 Vb TJ = 125 C, dI/dt = 100 A/sb TJ = 25 C
Body Diode Reverse Recovery Charge Reverse Recovery Time
nC A
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising form 0 to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS.
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Document Number: 91206 S-81273-Rev. B, 16-Jun-08
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
1000
TOP VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current ( )
100
100
10
BOTTOM
T J = 150C
10
1
1
0.1
T J = 25C
0.1
5.5V
0.01
20s PULSE WIDTH Tj = 25C
0.001 0.1 1 10 100 1000 0.01 4 6 8
VDS = 50V 20s PULSE WIDTH
10 12 14 16
VDS, Drain-to-Source Voltage (V)
VGS , Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
100
TOP
3.0
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
10
BOTTOM
VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V
ID = 21A
2.5
VGS = 10V
2.0
1
5.5V
(Normalized)
1.5
1.0
0.1
20s PULSE WIDTH Tj = 150C
0.01 0.1 1 10 100
0.5
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91206 S-81273-Rev. B, 16-Jun-08
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IRFP21N60L, SiHFP21N60L
Vishay Siliconix
100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd 10000 Coss = Cds + Cgd
12.0 ID= 21A
VGS , Gate-to-Source Voltage (V)
10.0
VDS= 480V VDS= 300V VDS= 120V
C, Capacitance(pF)
Ciss
1000
8.0 6.0
Coss
4.0
100
Crss
2.0
10 1 10 100 1000
0.0 0 20 40 60 80 100 120
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
25
100.00
20
ISD, Reverse Drain Current (A)
T J = 150C 10.00
Energy (J)
15
10
1.00
T J = 25C
5
VGS = 0V
0 0 100 200 300 400 500 600 700
0.10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS
Fig. 8 - Typical Source-Drain Diode Forward Voltage
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Document Number: 91206 S-81273-Rev. B, 16-Jun-08
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
VGS RG RD VDS D.U.T. + - VDD 10 V
Pulse width 1 s Duty factor 0.1 %
ID, Drain-to-Source Current (A)
100
10
100sec 1msec
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 10000 VDS, Drain-to-Source Voltage (V) Fig. 9 - Maximum Safe Operating Area 25
VDS 90 %
10msec
Fig. 11a - Switching Time Test Circuit
20
ID, Drain Current (A)
10 % VGS td(on) tr td(off) tf
15
10
Fig. 11b - Switching Time Waveforms
5
0 25 50 75 100 125 150 T C , Case Temperature (C) Fig. 10 - Maximum Drain Current vs. Case Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20 0.10 0.05
0.01
0.02 0.01
P DM t1
0.001
SINGLE PULSE ( THERMAL RESPONSE )
t2
Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T C
J = P DM x Z thJC
0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91206 S-81273-Rev. B, 16-Jun-08 www.vishay.com 5
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
5.0
VDS tp
VGS(th) Gate threshold Voltage (V)
4.0
ID = 250A
3.0
IAS
Fig. 14c - Unclamped Inductive Waveforms
2.0
Current regulator Same type as D.U.T.
1.0 -75 -50 -25 0 25 50 75 100 125 150
12 V
50 k 0.2 F 0.3 F
T J , Temperature ( C )
Fig. 13 - Threshold Voltage vs. Temperature
VGS D.U.T.
+ -
VDS
800
EAS , Single Pulse Avalanche Energy (mJ)
700 600 500 400 300 200
ID 9.4A 13A BOTTOM 21A TOP
3 mA
IG ID Current sampling resistors
Fig. 15a - Gate Charge Test Circuit
VGS
100
QG
QGS
0 25 50 75 100 125 150
QGD
VG
Starting T J , Junction Temperature (C)
Fig. 14a - Maximum Avalanche Energy vs. Drain Current
Charge
Fig. 15b - Basic Gate Charge Waveform
15 V
VDS
L
Driver
RG 20 V tp
D.U.T IAS 0.01
+ A - VDD
A
Fig. 14b - Unclamped Inductive Test Circuit
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Document Number: 91206 S-81273-Rev. B, 16-Jun-08
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
RG
* * * *
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode forward drop
Ripple 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 16 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91206.
Document Number: 91206 S-81273-Rev. B, 16-Jun-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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